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| NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P-Channel, ESD Protected SC-88 Features * * * * Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent) Gate Diodes for ESD Protection Pb-Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) Typ 45 mW @ -4.5 V -12 V 67 mW @ -2.5 V 133 mW @ -1.8 V -3.3 A ID Max Applications * High Side Load Switch * Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25 C TA = 85 C TA = 25 C TA = 25 C tp = 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value -12 12 -2.7 -2.0 -3.3 0.625 -8.0 -55 to 150 -0.8 260 W A Units V V A G D D SC-88 (SOT-363) 1 6 D 2 5 D 3 Top View 4 D S 3 kW G Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A C S THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Ambient - Steady State Junction-to-Ambient - t 5 s Junction-to-Lead - Steady State Symbol RqJA RqJA RqJL Max 200 141 102 Units C/W 1 MARKING DIAGRAM & PIN ASSIGNMENT D 6 TJ M G G 1 D TJ M G D G D S SC-88/SOT-363 CASE 419B STYLE 28 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 March, 2006 - Rev. 2 1 Publication Order Number: NTJS3151/D NTJS3151P ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = -9.6 V, VDS = 0 V TJ = 25C TJ = 125C -2.5 1.5 10 mA mA VGS = 0 V, ID = -250 mA -12 10 -1.0 V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current VDS = 0 V, VGS = 4.5 V VDS = 0 V, VGS = 12 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = -4.5 V, ID = -3.3 A VGS = -2.5 V, ID = -2.9 A VGS = -1.8 V, ID = -1.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VSD TJ = 25C TJ = 125C VGS = -4.5 V, VDD = -6.0 V, ID = -1.0 A, RG = 6.0 W 0.86 1.5 3.5 3.9 ms CISS COSS CRSS QG(TOT) QGS QGD RG VGS = -4.5 V, VDS = -5.0 V, ID = -3.3 A VGS = 0 V, f = 1.0 MHz, VDS = -12 V 850 170 110 8.6 1.3 2.2 3000 W nC pF gFS VGS = -10 V, ID = -3.3 A VGS = VDS, ID = 100 mA -0.40 3.4 45 67 133 15 60 90 160 S V mV/C mW DRAIN-SOURCE DIODE CHARACTERISTICS (Note 2) Forward Diode Voltage VGS = 0 V, IS = -3.3 A -0.85 -0.7 -1.2 V 2. Pulse Test: pulse width 300ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJS3151P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 8 -ID, DRAIN CURRENT (AMPS) VGS = -4.5 V VGS = -3.4 V -2.4 V -2 V TJ = 25C -ID, DRAIN CURRENT (AMPS) 8 VDS -12 V 6 6 4 4 125C 25C 0 0 TJ = -55C 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2 -1.6 V -1.4 V -1.2 V 0 1 2 3 4 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 2 0 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 VGS = -4.5 V 0.5 Figure 2. Transfer Characteristics VGS = -1.8 V 0.4 0.3 0.2 0.1 0 0.5 TJ = 25C 0.075 TJ = 125C 0.05 TJ = 25C TJ = -55C 0.025 VGS = -2.5 V VGS = -4.5 V 1.5 2.5 3.5 4.5 5.5 6.5 7.5 -ID, DRAIN CURRENT (AMPS) 0 0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 2.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 100000 -IDSS, LEAKAGE CURRENT (nA) Figure 4. On-Resistance vs. Drain Current and Gate Voltage ID = -3.3 A VGS = -4.5 V VGS = 0 V 10000 TJ = 150C 1000 TJ = 125C -25 0 25 50 75 100 125 150 100 0 2 8 4 6 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 12 TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTJS3151P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 0 Crss 0 2 4 6 8 10 12 Coss Ciss -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 ID = -3.3 A TJ = 25C 8 4 6 Qg, TOTAL GATE CHARGE (nC) 10 Q1 Q2 TJ = 25C VGS = 0 V QT GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Gate Charge 4 10000 tf td(off) t, TIME (ns) tr 1000 td(on) -IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 3 2 VDD = -6.0 V ID = -1.0 A VGS = -4.5 V 100 1 10 RG, GATE RESISTANCE (OHMS) 100 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJS3151P ORDERING INFORMATION Device NTJS3151PT1 NTJS3151PT1G NTJS3151PT2 NTJS3151PT2G Package SC-88 SC-88 (Pb-Free) SC-88 SC-88 (Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJS3151P PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 HE 1 2 3 -E- C b 6 PL 0.2 (0.008) A M L E M A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTJS3151P/D |
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